CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces
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چکیده
منابع مشابه
Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy
Self-assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma-assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 1010 cm–2, respectively. The dot density was found to decrease as the growth temperature increases. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red sh...
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ژورنال
عنوان ژورنال: Beilstein Journal of Nanotechnology
سال: 2019
ISSN: 2190-4286
DOI: 10.3762/bjnano.10.110